Karl K. Berggren

Scaling photonic quantum-information platforms requires arrays of superconducting nanowire single-photon detectors (SNSPDs) for feedforward control, in which optical operations are conditioned on preceding Bell-state measurements that typically rely on photon coincidence detections. On-chip superconducting cryotron electronics, performing logic directly on detector outputs and subsequently driving optical modulators, could substantially reduce latency and room-temperature interconnect complexity for feedforward schemes. To date, no cryotron logic gates specifically designed to process SNSPD outputs for quantum applications have been demonstrated. We demonstrate a bias-programmable logic gate based on three nanocryotrons (nTrons), fabricated using the same thin-film technology as SNSPDs. The circuit implements selectable AND (coincidence), XOR (odd-parity), and OR functions on two externally generated electrical pulses at 4.2 K, with bit-error rates below $10^{-3}$, bias margins up to $\pm24\%$, and operation extending to 25 MHz over narrower bias windows. Moreover, it performs coincidence and odd-parity detection on two co-fabricated SNSPDs' outputs with bit-error rates below $3.2 \times 10^{-2}$. As a proof-of-concept, we show that nTrons can drive capacitive loads up to 1.15 V, potentially enabling compatibility with electro-optic modulators in feedforward schemes.

Scaling photonic quantum-information platforms requires arrays of superconducting nanowire single-photon detectors (SNSPDs) for feedforward control, in which optical operations are conditioned on preceding Bell-state measurements that typically rely on photon coincidence detections. On-chip superconducting cryotron electronics, performing logic directly on detector outputs and subsequently driving optical modulators, could substantially reduce latency and room-temperature interconnect complexity for feedforward schemes. To date, no cryotron logic gates specifically designed to process SNSPD outputs for quantum applications have been demonstrated. We demonstrate a bias-programmable logic gate based on three nanocryotrons (nTrons), fabricated using the same thin-film technology as SNSPDs. The circuit implements selectable AND (coincidence), XOR (odd-parity), and OR functions on two externally generated electrical pulses at 4.2 K, with bit-error rates below $10^{-3}$, bias margins up to $\pm24\%$, and operation extending to 25 MHz over narrower bias windows. Moreover, it performs coincidence and odd-parity detection on two co-fabricated SNSPDs' outputs with bit-error rates below $3.2 \times 10^{-2}$. As a proof-of-concept, we show that nTrons can drive capacitive loads up to 1.15 V, potentially enabling compatibility with electro-optic modulators in feedforward schemes.

Scaling the photon-detection area of superconducting nanowire single-photon detectors (SNSPDs) has traditionally been achieved by nanowire meandering. However, material inhomogeneities and fabrication-induced defects, such as line-edge roughness, increase with nanowire length, leading to reduced internal photon-detection efficiency and elevated dark-count rates. This trade-off becomes increasingly pronounced as nanowires are scaled to sub-100 nm widths and sub-5 nm thicknesses required for mid- to far-infrared sensitivity. Here, we demonstrate an antenna-coupled SNSPD architecture that enhances the effective photon-detection area without increasing nanowire length. A crossed bowtie antenna integrated with an 80 nm-wide, 3 nm-thick WSi nanowire yields 15.7$\times$ increase in effective detection area at 7.4 $μ$m compared to a bare nanowire of identical geometric footprint, while maintaining the same internal detection efficiency and dark-count rate. Antenna coupling improves noise-equivalent power and provides a more scalable route to increasing photon-detection area than conventional meander geometries, offering performance benefits for applications in astronomy, biological imaging, and molecular spectroscopy.

Scaling the photon-detection area of superconducting nanowire single-photon detectors (SNSPDs) has traditionally been achieved by nanowire meandering. However, material inhomogeneities and fabrication-induced defects, such as line-edge roughness, increase with nanowire length, leading to reduced internal photon-detection efficiency and elevated dark-count rates. This trade-off becomes increasingly pronounced as nanowires are scaled to sub-100 nm widths and sub-5 nm thicknesses required for mid- to far-infrared sensitivity. Here, we demonstrate an antenna-coupled SNSPD architecture that enhances the effective photon-detection area without increasing nanowire length. A crossed bowtie antenna integrated with an 80 nm-wide, 3 nm-thick WSi nanowire yields 15.7$\times$ increase in effective detection area at 7.4 $μ$m compared to a bare nanowire of identical geometric footprint, while maintaining the same internal detection efficiency and dark-count rate. Antenna coupling improves noise-equivalent power and provides a more scalable route to increasing photon-detection area than conventional meander geometries, offering performance benefits for applications in astronomy, biological imaging, and molecular spectroscopy.

Experiments on superconducting materials have unveiled unique emergent properties when they are driven far from equilibrium. However, a quantitative first-principles treatment that describes experimental observations is lacking. In this work, we develop an ab-initio model for the nonequilibrium response of optically irradiated superconducting films within the framework of conventional electron-phonon-mediated superconductivity, leveraging new numerical techniques to solve the Migdal-Eliashberg equations directly on the real-frequency axis. This enables us to quantitatively reproduce the optical response of superconducting films in pump-probe experiments and validate our approach on measurements of the differential reflectance of Pb and LaH$_{10}$ in response to a pump excitation. Similar calculations performed on the alkali-doped fulleride K$_3$C$_{60}$ reveal that a photo-induced superconducting state is generated after irradiation by an ultrafast mid-infrared pulse of sufficient intensity, as reported in prior experimental work. The enhancement in this framework is attributed to the excitation of quasiparticles to energies resonant with the strongest electron-phonon coupling in K$_3$C$_{60}$, in close analogy to the mechanism for enhancement of superconductivity under microwave irradiation, explaining the nature of the photo-induced superconducting state and elucidating the subsequent quasiparticle and phonon dynamics. Our results suggest that photo-induced superconductivity is accessible in more materials than previously recognized. We demonstrate this by performing calculations on calcium-intercalated graphite, CaC$_6$, and predict a similar photo-induced superconducting gap.

Experimentally relevant signatures of superconductivity require access to real-frequency quantities, such as the spectral functions, optical response, and transport properties, yet Migdal-Eliashberg calculations are commonly performed on the imaginary axis and then analytically continued, a step that is numerically delicate and can obscure physically relevant spectral features. Here we present a practical route to solving the finite-temperature Migdal-Eliashberg equations directly on the real-frequency axis, while retaining the effects from the full-bandwidth electronic structure. Our formulation accounts for particle-hole asymmetry through an energy-dependent electronic density of states, avoiding the constant density of states approximation often used in real-axis calculations, and includes a static screened Coulomb contribution. We introduce an efficient numerical technique to solve the Migdal-Eliashberg integrals whose computational cost scales linearly with the real-frequency grid, making high-resolution, full-bandwidth real-axis calculations feasible and providing direct access to the interacting Green's function and derived observables without analytic continuation. As an illustration, we apply the method to H$_{3}$S, where a van-Hove singularity near the Fermi level produces strong particle-hole asymmetry. The full-bandwidth solution yields noticeably different spectra than the constant density of states approximation and brings the superconducting gap and lineshapes into closer agreement with experiment, highlighting when band-structure details are essential. Furthermore, the methods presented here open the door to time-dependent, nonequilibrium simulations within Eliashberg theory.

Experimentally relevant signatures of superconductivity require access to real-frequency quantities, such as the spectral functions, optical response, and transport properties, yet Migdal-Eliashberg calculations are commonly performed on the imaginary axis and then analytically continued, a step that is numerically delicate and can obscure physically relevant spectral features. Here we present a practical route to solving the finite-temperature Migdal-Eliashberg equations directly on the real-frequency axis, while retaining the effects from the full-bandwidth electronic structure. Our formulation accounts for particle-hole asymmetry through an energy-dependent electronic density of states, avoiding the constant density of states approximation often used in real-axis calculations, and includes a static screened Coulomb contribution. We introduce an efficient numerical technique to solve the Migdal-Eliashberg integrals whose computational cost scales linearly with the real-frequency grid, making high-resolution, full-bandwidth real-axis calculations feasible and providing direct access to the interacting Green's function and derived observables without analytic continuation. As an illustration, we apply the method to H$_{3}$S, where a van-Hove singularity near the Fermi level produces strong particle-hole asymmetry. The full-bandwidth solution yields noticeably different spectra than the constant density of states approximation and brings the superconducting gap and lineshapes into closer agreement with experiment, highlighting when band-structure details are essential. Furthermore, the methods presented here open the door to time-dependent, nonequilibrium simulations within Eliashberg theory.

Experiments on superconducting materials have unveiled unique emergent properties when they are driven far from equilibrium. However, a quantitative first-principles treatment that describes experimental observations is lacking. In this work, we develop an ab-initio model for the nonequilibrium response of optically irradiated superconducting films within the framework of conventional electron-phonon-mediated superconductivity, leveraging new numerical techniques to solve the Migdal-Eliashberg equations directly on the real-frequency axis. This enables us to quantitatively reproduce the optical response of superconducting films in pump-probe experiments and validate our approach on measurements of the differential reflectance of Pb and LaH$_{10}$ in response to a pump excitation. Similar calculations performed on the alkali-doped fulleride K$_3$C$_{60}$ reveal that a photo-induced superconducting state is generated after irradiation by an ultrafast mid-infrared pulse of sufficient intensity, as reported in prior experimental work. The enhancement in this framework is attributed to the excitation of quasiparticles to energies resonant with the strongest electron-phonon coupling in K$_3$C$_{60}$, in close analogy to the mechanism for enhancement of superconductivity under microwave irradiation, explaining the nature of the photo-induced superconducting state and elucidating the subsequent quasiparticle and phonon dynamics. Our results suggest that photo-induced superconductivity is accessible in more materials than previously recognized. We demonstrate this by performing calculations on calcium-intercalated graphite, CaC$_6$, and predict a similar photo-induced superconducting gap.

Figure 1. Device architecture and operation concept of the superconducting nanowire memory (SNM). This figure illustrates the structure and operating principle of the SNM cell. It includes a schematic representation of the nanowire circuit layout, highlighting key components such as the storage loop, write and read paths, and control lines. The figure also includes a simplified circuit diagram and a conceptual illustration of the bistable states corresponding to stored logical ‘0’ and ‘1’. These states are defined by the presence or absence of a persistent current in the storage loop, enabling non-volatile memory behavior.

Figure 1. Device architecture and operation concept of the superconducting nanowire memory (SNM). This figure illustrates the structure and operating principle of the SNM cell. It includes a schematic representation of the nanowire circuit layout, highlighting key components such as the storage loop, write and read paths, and control lines. The figure also includes a simplified circuit diagram and a conceptual illustration of the bistable states corresponding to stored logical ‘0’ and ‘1’. These states are defined by the presence or absence of a persistent current in the storage loop, enabling non-volatile memory behavior.

Achieving both high internal efficiency and fast reset times at elevated temperatures remains challenging due to limited understanding of how film properties govern SNSPD performance. We demonstrate that epitaxial NbN films on sapphire enable simultaneous high efficiency and rapid response. We fabricate and characterize SNSPDs based on these films deposited via DC magnetron sputtering on c-cut sapphire. High-quality epitaxial growth preserves a low electron diffusion coefficient and promotes strong electron-phonon coupling, yielding a high critical temperature and efficient hotspot formation in the dirty limit. X-ray diffraction and transmission electron microscopy confirm epitaxial alignment and lattice order. Nanowires of 20 nm width exhibit saturated internal efficiency at 1550 nm wavelength and short reset times at 4.2 K, enabled by lattice matching and high thermal conductance of the sapphire interface. Ab initio modeling reproduces photon count rates, linking device performance quantitatively to film properties such as diffusivity and electron-phonon coupling.

Achieving both high internal efficiency and fast reset times at elevated temperatures remains challenging due to limited understanding of how film properties govern SNSPD performance. We demonstrate that epitaxial NbN films on sapphire enable simultaneous high efficiency and rapid response. We fabricate and characterize SNSPDs based on these films deposited via DC magnetron sputtering on c-cut sapphire. High-quality epitaxial growth preserves a low electron diffusion coefficient and promotes strong electron-phonon coupling, yielding a high critical temperature and efficient hotspot formation in the dirty limit. X-ray diffraction and transmission electron microscopy confirm epitaxial alignment and lattice order. Nanowires of 20 nm width exhibit saturated internal efficiency at 1550 nm wavelength and short reset times at 4.2 K, enabled by lattice matching and high thermal conductance of the sapphire interface. Ab initio modeling reproduces photon count rates, linking device performance quantitatively to film properties such as diffusivity and electron-phonon coupling.

of the first

Superconducting nanowire single-photon detectors (SNSPDs) exhibit complex switching behaviors due to electro thermal feedback during the detection process. Modeling and understanding these behaviors is integral for designing superconducting devices; however, many models often prioritize accuracy over computational speed and intuitive integration for circuit designers. Here, we build upon a growing architecture of SPICE tools for superconducting nanowire devices by capturing complex residual heating effects in a compact thermal model of an SNSPD. We demonstrate that our model is comparable to more complicated thermal models of superconducting nanowire devices, including finite-element simulations, and is applicable for the fast development of SNSPD circuits.

Abstract Novel electronic devices can often be operated in a plethora of ways, which makes testing circuits comprised of them difficult. Often, no single tool can simultaneously analyze the operating margins, maximum speed, and failure modes of a circuit, particularly when the intended behavior of subcomponents of the circuit is not standardized. This work demonstrates a cost-effective time-domain data acquisition system for electronic circuits that enables more intricate verification techniques than are practical with conventional experimental setups. We use high-speed digital-to-analog converters and real-time multi-gigasample-per-second waveform processing to push experimental circuits beyond their maximum operating speed. Our custom time-tagging data capture firmware reduces memory requirements and can be used to determine when errors occur. The firmware is combined with a thermal-noise-limited analog frontend with 50 dB of dynamic range. Compared to currently available commercial test equipment that is seven times more expensive, this data acquisition system was able to operate a superconducting shift register at a nearly three-times-higher clock frequency (200 MHz vs. 80 MHz).

Superconducting circuits are promising candidates for future computational architectures; however, practical applications require fast operation. Here, we demonstrate fast, gate-based switching of an Al nanowire-based superconducting switch in time-domain experiments. We apply voltage pulses to the gate while monitoring the microwave transmission of the device. Utilizing the usual leakage-based operation, these measurements yield a fast, 1-2 ns switching time to the normal state, possibly limited by the bandwidth of our setup, and a 15-20 ns delay in the normal to superconducting transition. However, having a significant capacitance between the gate and the device allows for a different operation, where the displacement current, induced by the fast gate pulses, drives the transition. The switching from superconducting to the normal state yields a similar fast time scale, while in the opposite direction the switching is significantly faster (4-6 ns) than the leakage-based operation, which may be further improved by a better thermal design. The measured short time scales and the displacement current-based switching operation will be important for future fast and low-power-consumption applications.

Superconducting devices have enabled breakthrough performance in quantum sensing and ultralow-power computing. Nevertheless, the need for a cryoelectronics platform that can interface superconductor electronics with complementary metal-oxide-semiconductor (CMOS) devices has become increasingly evident in many cutting-edge applications. In this work, we present a three-terminal micrometer-wide superconducting-wire-based cryotron switch (wTron), fabricated using photolithography, that can directly interface with CMOS electronics. The wTron features an output impedance exceeding $1\phantom{\rule{0.2em}{0ex}}\mathrm{k}\mathrm{\ensuremath{\Omega}}$ and exhibits reduced sensitivity to ambient magnetic noise, similar to its nanoscale predecessor, the nanocryotron. In addition, its micrometer-wide wires support switching currents in the milliamp range, making it well suited to driving current-hungry resistive loads and highly capacitive CMOS loads. We demonstrate this capability by using the wTron to drive room-temperature CMOS electronics, including a light-emitting diode and a metal-oxide-semiconductor field-effect transistor (MOSFET) with a gate capacitance of 500 pF. We then examine the optimal design parameters required for wTrons to drive CMOS loads, such as MOSFETs, high-electron mobility transistors, and electro-optic modulators. Furthermore, to demonstrate the foundry readiness of the wTron, we fabricate wTrons using MIT Lincoln Laboratory's SFQ5ee superconducting process and characterize their switching behavior. Our work shows that the wTron will facilitate the interface between superconductor electronics and CMOS devices, thereby paving the way for the development of foundry-compatible cryoelectronic ecosystems to advance next-generation computing and quantum applications.

In this work, we present a technique to determine the mid-infrared refractive indices of thin superconducting films using Fourier transform infrared spectroscopy (FTIR). In particular, we performed FTIR transmission and reflection measurements on 10-nm-thick NbN and 15-nm-thick MoSi films in the wavelength range of 2.5–25 μm, corresponding to frequencies of 12–120 THz or photon energies of 50–500 meV. To extract the mid-infrared refractive indices of these thin films, we used the Drude–Lorentz oscillator model to represent their dielectric functions and implemented an optimization algorithm to fit the oscillator parameters by minimizing the error between the measured and simulated FTIR spectra. We performed Monte Carlo simulations in the optimization routine to estimate error ranges in the extracted refractive indices resulting from multiple sources of measurement uncertainty. To evaluate the consistency of the extracted dielectric functions, we compared the refractive indices extrapolated from these dielectric functions in the UV to near-infrared wavelengths with the values separately measured using spectroscopic ellipsometry. We validated the applicability of the extracted mid-infrared refractive indices of NbN and MoSi at temperatures below their critical temperatures by comparing them with the Mattis–Bardeen model. This FTIR-based refractive index measurement approach can be extended to measure the refractive indices of thin films at wavelengths beyond 25 μm, which will be useful for designing highly efficient photon detectors and photonic devices with enhanced optical absorption in the mid- and far-infrared wavelengths.

In pursuit of petahertz electronics, we seek to develop light-wave electronic circuits which are orders of mag-nitude faster than conventional electronics and work to realize signal processing at unprecedented bandwidths [1]. Optically driven nanoantennas are a promising candidate for petahertz electronics, with many advantages such as sub-cycle attosecond charge transport, polarization sensitivity, and low optical field requirements due to their geometrical and resonant field enhancement [2]–[4]. However, the development of petahertz logic-gates [5] and memory circuits is hindered by the computational cost of full electromagnetic and particle tracking simulations, which become unwieldy when scaling from a single antenna to a system of multiple interconnected ones. To overcome this challenge, we developed a compact circuit model in LTspice which goes beyond describing the electromagnetic response as was done in prior works [6]. Our model also describes charge transport in a nanoantenna, paving the way for effective modeling of functional petahertz circuit elements.

Light dark matter candidates such as axions and dark photons generically couple to electromagnetism, yielding dark-matter-to-photon conversion as a key search strategy. In addition to resonant conversion in cavities and circuits, light dark matter bosons efficiently convert to photons on material interfaces, with a broadband power proportional to the total area of these interfaces. In this work, we make use of interface conversion to develop a new experimental dark matter detector design: the disordered dielectric detector. We show that a volume filled with dielectric powder is an efficient, robust, and broadband target for axion-to-photon or dark-photon-to-photon conversion. We perform semi-analytical and numerical studies in small-volume 2D and 3D disordered systems to compute the conversion power as a function of dark matter mass. We also discuss the power gathered onto a sensitive photodetector in terms of the bulk properties of the disordered material, making it possible to characterize the predicted dark-matter-to-photon conversion rate across a wide range of wavelengths. Finally, we propose DPHaSE: the Dielectric Powder Haloscope SNSPD Experiment which is composed of a disordered dielectric target, a veto system, and a photon collection chamber to maximize the coupling between the powder target and a low noise superconducting nanowire single photon detector (SNSPD). The projected reach, in the 10 meV-eV mass range, is sensitive to QCD axion-photon couplings and exceeds current constraints on dark photon dark matter by up to 5 orders of magnitude.

Long distance quantum networking requires combining efficient spin-photon interfaces with long-lived local memories. Group-IV color centers in diamond (SiV, GeV, and SnV) are promising candidates for this application, containing an electronic spin-photon interface and dopant nuclear spin memory. Recent work has demonstrated state-of-the-art performance in spin-photon coupling and spin-spin entanglement. However, coupling between the electron and nuclear spins introduces a phase kickback during optical excitation that limits the utility of the nuclear memory. Here, we propose using the large hyperfine coupling of SnV-117 to operate the device at zero magnetic field in a regime where the memory is insensitive to optical excitation. We further demonstrate ground state spin control of a SnV-117 color center integrated in a photonic integrated circuit, showing 97.8% gate fidelity and 2.5 ms coherence time for the memory spin level. This shows the viability of the zero-field protocol for high fidelity operation, and lays the groundwork for building quantum network nodes with SnV-117 devices.

Superconducting thin-film electronics can offer low power consumption, fast operating speeds and interfacing capabilities with cryogenic systems such as single-photon detector arrays and quantum computing devices. However, the lack of a reliable superconducting two-terminal asymmetric device, analogous to a semiconducting diode, limits the development of power-handling circuits, which are fundamental for scaling up such technology. Here we report a robust superconducting diode with tunable polarity using the asymmetric vortex surface barrier in niobium nitride micro-bridges. The diode offers a 43% peak rectification efficiency and half-wave rectification up to 120 MHz. We also integrate several of the diodes to create a bridge rectifier circuit on a single microchip that can perform continuous full-wave rectification at up to 3 MHz and alternating to direct current conversion of a 50 MHz signal in periodic bursts with an estimated peak power efficiency of 50%. A circuit consisting of four superconducting diodes implemented in niobium nitride thin film on a single chip can achieve alternating to direct current conversion with 50 MHz signals in periodic bursts.

Advances in HER2-targeted therapies increased the need for accurate distinction between HER2-0 and HER2-low patients. HER2-low is defined as HER2 1+ or 2+ with a negative fluorescence in situ hybridisation result. In the past, vast differences between central and local laboratory scorings regarding HER2 0 and 1+ were discovered (15% concordance). This has generated a demand for highly sensitive assays to prevent unnecessary treatment with toxic antibody-drug conjugates like trastuzumab-deruxtecan.

Quantum communications technologies require a network of quantum processors connected with low-loss and low-noise communication channels capable of distributing entangled states. Superconducting microwave qubits operating in cryogenic environments have emerged as promising candidates for quantum processor nodes. However, scaling these systems is challenging because they require bulky microwave components with high thermal loads that can quickly overwhelm the cooling power of a dilution refrigerator. Telecommunication frequency optical signals, however, can be fabricated in significantly smaller form factors to avoid challenges caused by high signal loss, noise sensitivity and thermal loads due to their high carrier frequency and propagation in silica optical fibres. Transduction of information by means of coherent links between optical and microwave frequencies is therefore critical to leverage the advantages of optics for superconducting microwave qubits, while also enabling superconducting processors to be linked with low-loss optical interconnects. Here, we demonstrate coherent optical control of a superconducting qubit. We achieve this by developing a microwave–optical quantum transducer that operates with up to 1.18% conversion efficiency with low added microwave noise, and we demonstrate optically driven Rabi oscillations in a superconducting qubit. Superconducting qubits operate at microwave frequencies, but it is much more efficient to transmit information optically. Now, a superconducting qubit has been controlled with an optical signal by using a microwave–optical quantum transducer.

Developing ultra-low-energy superconducting computing and fault-tolerant quantum computing will require scalable superconducting memory. While conventional superconducting logic-based memory cells have facilitated early demonstrations, their large footprint poses a significant barrier to scaling. Nanowire-based superconducting memory cells offer a compact alternative, but high error rates have hindered their integration into large arrays. In this work, we present a superconducting nanowire memory array designed for scalable row-column operation, achieving a functional density of 2.6$\,$Mb/cm$^{2}$. The array operates at $1.3\,$K, where we implement and characterize multi-flux quanta state storage and destructive readout. By optimizing write and read pulse sequences, we minimize bit errors while maximizing operational margins in a $4\times 4$ array. Circuit-level simulations further elucidate the memory cell's dynamics, providing insight into performance limits and stability under varying pulse amplitudes. We experimentally demonstrate stable memory operation with a minimum bit error rate of $10^{-5}$. These results suggest a promising path for scaling superconducting nanowire memories to high-density architectures, offering a foundation for energy-efficient memory in superconducting electronics.

Lightwave electronics offer transformative field-level precision and control at high optical frequencies. While recent advances show that lightwave-driven electron emission from nanoantennas enables time-domain, field-resolved analysis of optical waveforms through a small-signal analysis, the effect of the gate waveform on the measurement transfer function remains unexplored. By generating electrons with a 10-cycle pulse in the optical tunneling regime and perturbing the response with a 1.5-cycle pulse, we experimentally measure the bandwidth limitations imposed by the electron emission process. By comparing these measurements with TDSE simulations and analytical models, we reveal the temporal properties of the electronic response and its impact on the small-signal transfer function. Our results test and confirm the accuracy of the Fowler-Nordheim model in estimating the lightwave electronic response from noble metals. We envision extending these techniques to multi-octave-spanning signals for precise characterization of sub-cycle electronic responses through harmonic frequency mixing.

The Adiabatic Quantum Flux Parametron (AQFP) superconducting logic family is an attractive beyond-CMOS technology due to its extreme energy efficiency. As AQFP circuits become more complex and target applications scale to microprocessors and ASICs, a high performance and area efficient register-level memory design is essential. In this work, we design and implement a 3-bit memory cell based on a simple Set-Reset (SR) latch attached to a shift register feedback loop. This design is more compact than existing AQFP registers that encode data with Data-Enable logic and therefore require larger XOR-style gates for every 1-bit cell (Tsuji et al., 2017). Furthermore, we share layout design and simulation results for scaling this circuit to an 8-bit memory cell and a N-row × M-col × 8-bit register file. By using SR data encoding, we are able to join the cells in an array using more compact AND gates, performing cell-level addressing with two write demuxes and two read decoders. Projecting our initial designs to a 32-word by 8-bit register file, we find that our SR-loop memory array has a 26% decrease in area compared to other state-of-the-art designs.

Single-photon time-of-flight light detection and ranging (LiDAR) is a versatile technique for the measurement of absolute distances and for depth profiling. It has a wide variety of applications (e.g., land surveying, autonomous car navigation, underwater imaging) with the potential to achieve high-resolution three-dimensional images over long ranges when the key components of the measurement system are of a suitably high specification. In this work, a novel, high-efficiency, and low timing jitter superconducting nanowire single-photon detector, in conjunction with a custom single-pixel scanning transceiver system, and the time-correlated single-photon counting technique, enable the acquisition of millimeter-scale resolution depth images of scenes at standoff distances of hundreds of meters. A 1550 nm wavelength fiber laser was coupled to the monostatic transceiver to provide the illumination. The system was eye-safe with the maximum average optical output power being ≤3.5mW for measurements of a scene at a standoff distance of 1 km. The overall system instrumental response was approximately 13 ps full width half maximum. This enabled 1 mm depth features on a reference board and a human head to be clearly resolved when measured by the system in broad daylight at standoff distances of 45 and 325 m using per-pixel acquisition times of between 0.25 and 1 ms. These high-resolution results demonstrate the enormous potential of such a system to acquire detailed depth and intensity images of scenes from long distances in daylight or darkness conditions. This could lead to step change improvements in applications such as facial and human activity recognition and the imaging of scenes through clutter and atmospheric obscurants.

Abstract We analytically describe the noise properties of a heralded electron source made from a standard electron gun, a weak photonic coupler, a single photon counter, and an electron energy filter. We describe the sub-Poissonian statistics of the source, the engineering requirements for efficient heralding, and several potential applications. We use simple models of electron beam processes to demonstrate advantages which are situational, but potentially significant in electron lithography and scanning electron microscopy.

The scaling of superconducting nanowire detectors to larger arrays is often limited by room-temperature-readout cabling. Cryogenic integrated circuits constructed from nanowire cryotrons, or nanocryotrons, can address this limitation by performing signal processing on chip. In this study, we characterize key performance metrics of the nanocryotron to elucidate its potential as a logical element in cryogenic integrated circuits and develop an electro-thermal model to connect material parameters with device performance. We find that the performance of the nanocryotron depends on the device geometry, and trade-offs are associated with optimizing the gain, jitter, and energy dissipation. We demonstrate that nanocryotrons fabricated on niobium nitride can achieve a grey zone less than 210 nA wide for a 5 ns long input pulse corresponding to a maximum achievable gain of 48 dB, an energy dissipation of less than 20 aJ per operation, and a jitter of less than 60 ps.

Attosecond science has demonstrated that electrons can be controlled on the sub-cycle time scale of an optical waveform, paving the way towards optical frequency electronics. However, these experiments historically relied on high-energy laser pulses and detection not suitable for microelectronic integration. For practical optical frequency electronics, a system suitable for integration and capable of generating detectable signals with low pulse energies is needed. While current from plasmonic nanoantenna emitters can be driven at optical frequencies, low charge yields have been a significant limitation. In this work we demonstrate that large-scale electrically connected plasmonic nanoantenna networks, when driven in concert, enable charge yields sufficient for single-shot carrier-envelope phase detection at repetition rates exceeding tens of kilohertz. We not only show that limitations in single-shot CEP detection techniques can be overcome, but also demonstrate a flexible approach to optical frequency electronics in general, enabling future applications such as high sensitivity petahertz-bandwidth electric field sampling or logic-circuits.

Presents corrections to the paper, Electron Emission Regimes of Planar Nano Vacuum Emitters.

This work demonstrates electron energy loss spectroscopy of 2D materials in a 1-30 keV electron microscope, observing 100-times stronger electron-matter coupling relative to 125 keV microscopes. We observe that the universal curve relating beam energy to scattering holds for the transition from bulk graphite to graphene, albeit with a scale factor. We calculate that optimal coupling for most 2D materials and optical nanostructures falls in this range, concluding that spectroscopy of such systems will greatly benefit from use of this previously unexplored energy regime.

The scaling of superconducting nanowire-based devices to larger arrays is often limited by the cabling required to interface with each device. Cryogenic integrated circuits constructed from nanowire cryotrons, or nanocryotrons, can address this limitation by performing signal processing on chip. In this study, we characterize key performance metrics of the nanocryotron to elucidate its potential as a logical element in cryogenic integrated circuits and develop an electro-thermal model to connect material parameters with device performance. We find that the performance of the nanocryotron depends significantly on the device geometry, and trade-offs are associated with optimizing the gain, jitter, and energy dissipation. We demonstrate that nanocryotrons fabricated on niobium nitride can achieve a grey zone less than 210 nA wide for a 5 ns long input pulse corresponding to a maximum achievable gain of 48 dB, an energy dissipation of less than 20 aJ per operation, and a jitter of less than 60 ps.

High Resolution Image Download MS PowerPoint Slide Progress in superconducting device and detector technologies over the past decade has realized practical applications in quantum computers, detectors for far-infrared telescopes, and optical communications. Superconducting thin-film materials, however, have remained largely unchanged, with aluminum still being the material of choice for superconducting qubits and niobium compounds for high-frequency/high kinetic inductance devices. Magnesium diboride (MgB 2 ), known for its highest transition temperature ( T c = 39 K) among metallic superconductors, is a viable material for elevated temperature and higher frequency superconducting devices moving toward THz frequencies. However, difficulty in synthesizing wafer-scale thin films has prevented implementation of MgB 2 devices into the application base of superconducting electronics. Here, we report ultrasmooth (<0.5 nm root-mean-square roughness) and uniform MgB 2 thin (<100 nm) films over 100 mm in diameter and present prototype devices fabricated with these films demonstrating key superconducting properties including an internal quality factor over 10 4 at 4.5 K and high tunable kinetic inductance in the order of tens of pH/sq in a 40 nm thick film. This advancement will enable development of elevated temperature, high-frequency superconducting quantum circuits, and devices.

Electronic frequency mixers are fundamental building blocks of electronic systems. Harmonic frequency mixing in particular enables broadband electromagnetic signal analysis across octaves of spectrum using a single local oscillator. However, conventional harmonic frequency mixers do not operate beyond hundreds of gigahertz to a few terahertz. If extended to the petahertz scale in a compact and scalable form, harmonic mixers would enable field-resolved optical signal analysis spanning octaves of spectra in a monolithic device without the need for frequency conversion using nonlinear crystals. Here, we demonstrate lightwave-electronic harmonic frequency mixing beyond 0.350 PHz using plasmonic nanoantennas. We demonstrate that the mixing process enables complete, field-resolved detection of spectral content far outside that of the local oscillator, greatly extending the range of detectable frequencies compared to conventional heterodyning techniques. Our work has important implications for applications where optical signals of interest exhibit coherent femtosecond-scale dynamics spanning multiple harmonics.

Scaling up cryogenic systems, like arrays of superconducting nanowire single-photon detectors (SNSPDs), requires developing cryogenic coprocessors to minimize the number of cables exiting the cryostat. This work addresses this challenge by demonstrating the ability to read out, process, encode, and store data from SNSPDs using integrated nanowire electronics. The authors design a digital counter based on nanocryotrons---three-terminal nanowire devices---to perform signal processing and digitization at low temperatures. These results suggest that nanowire coprocessors could be developed, which would benefit the application of SNSPD arrays and other superconducting platforms.